Ion-induced damage and annealing of silicon. Molecular dynamics simulations

David Humbird 1  und David B. Graves 1
  • 1 University of California at Berkeley, Berkeley, CA 94720, USA

A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.

Falls das inline PDF nicht korrekt dargestellt ist, können Sie das PDF hier herunterladen.

FREIER ZUGANG

Zeitschrift + Hefte

Suche