Ion-induced damage and annealing of silicon. Molecular dynamics simulations

David Humbird 1  and David B. Graves 1
  • 1 University of California at Berkeley, Berkeley, CA 94720, USA

A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.

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