Plasma treatment studies of MIS devices

Deepak Basa 1
  • 1 Department of Physics, Utkal University, Bhubaneswar, 751004, India

Abstract

Silicon nitride films have emerged as the possible future dielectrics for ultra large scale integration (ULSI). Because the interface state density of silicon nitride/silicon interface in metal insulator semiconductor (MIS) configuration is more than an order of magnitude larger than that of silicon dioxide/silicon interface, plasma treatment studies on silicon nitride films have been undertaken for the possible improvement. Accordingly, silicon nitride films of various composition have been prepared by plasma enhanced chemical vapor deposition (PECVD) system using silane(SiH4) and ammonia(NH3) with nitrogen(N2) as the diluent and MIS devices have been fabricated with as well as without plasma treated silicon nitride as the insulator. A considerable improvement in the silicon nitride/silicon interface is observed on ammonia plasma treatment while nitrous oxide(N2O) plasma treatment studies have resulted in the establishment of a novel plasma oxidation process.

If the inline PDF is not rendering correctly, you can download the PDF file here.

  • [1] R. H. Dennard et al., IEEE J. Solid-St. Circ. 9, 256 (1974) http://dx.doi.org/10.1109/JSSC.1974.1050511

  • [2] G. Baccarani, M.R. Wordeman, R. H. Dennard, IEEE T. Electron Dev. 31, 452 (1984) http://dx.doi.org/10.1109/T-ED.1984.21550

  • [3] P. A. Packan, Science 285, 2079 (1999) http://dx.doi.org/10.1126/science.285.5436.2079

  • [4] G. D. Wilk, R. M. Wallace, J. M. Anthony, J. Appl. Phys. 89, 5243 (2001) http://dx.doi.org/10.1063/1.1361065

  • [5] M. Bose, D. K. Basa, D. N. Bose, Appl. Surf. Sci. 158, 275 (2000) http://dx.doi.org/10.1016/S0169-4332(00)00023-4

  • [6] D. K. Basa, M. Bose, D. N. Bose, J. Appl. Phys. 87, 4324 (2000) http://dx.doi.org/10.1063/1.373073

  • [7] M. Bose, D. K. Basa, D. N. Bose, Appl. Surf. Sci. 171, 130 (2001) http://dx.doi.org/10.1016/S0169-4332(00)00557-2

  • [8] M. Bose, D. K. Basa, D. N. Bose, J. Vac. Sci. Technol. A19, 41 (2001)

  • [9] M. Bose, D. K. Basa, D. N. Bose, Material Letters 48, 336 (2001) http://dx.doi.org/10.1016/S0167-577X(00)00323-2

  • [10] P. T. Chenetal., J. Appl. Phys. 104, 014106 (2008) http://dx.doi.org/10.1063/1.2948922

  • [11] P. D. Kirsch, T. Lafford, Q. Wang, J. G. Ekerdt, J. Appl. Phys. 99, 023508 (2006) http://dx.doi.org/10.1063/1.2161819

  • [12] E. Jud, M. Tang, Y. M. Chiang, J. Appl. Phys. 103, 114108 (2008) http://dx.doi.org/10.1063/1.2937900

  • [13] Y. Wu, G. Lucovsky, IEEE Electr. Device L. 19, 367 (1998) http://dx.doi.org/10.1109/55.720188

  • [14] C. E. Morosanu, Thin Solid Films 65, 171 (1980) http://dx.doi.org/10.1016/0040-6090(80)90254-0

  • [15] C. J. Bedelletal., Nucl. Instrum, Meth. B59-60, 245 (1991)

  • [16] M. C. Hugon, F. Delmotte, B. Agius, J. L. Courant, J. Vac. Sci. Technol. A15, 3143 (1997)

  • [17] S. Graciaetal., J. Appl. Phys. 83, 332 (1998) http://dx.doi.org/10.1063/1.366713

  • [18] H. Arai, K. Tanaka, S. Kohda, J. Vac. Sci. Technol. B 6, 831 (1988) http://dx.doi.org/10.1116/1.584349

  • [19] Z. Lu, S. S. He, Y. Ma, G. Lucovsky, J. Non-Cryst. Solids, 187, 340 (1995) http://dx.doi.org/10.1016/0022-3093(95)00161-1

  • [20] Y. Ma, T. Yasuda, G. Lucovsky, J. Vac. Sci. Technol. A 11, 952 (1993) http://dx.doi.org/10.1116/1.578574

  • [21] W. Honlien, H. Reisinger, Appl. Surf. Sci. 39, 178 (1989) http://dx.doi.org/10.1016/0169-4332(89)90432-7

  • [22] Y. Ma, T. Yasuda, G. Lucovsky, Appl. Phys. Lett. 64, 2226 (1994) http://dx.doi.org/10.1063/1.111681

  • [23] M. Bose, D. N. Bose, D. K. Basa, Material Letters 52, 417 (2002) http://dx.doi.org/10.1016/S0167-577X(01)00436-0

  • [24] E. Rauhala, Nucl. Instrum. Meth. B40-41, 790 (1989)

  • [25] E. Rauhala, J. Saarilahti, N. Nath, Nucl. Instrum. Meth. B61, 83 (1991)

  • [26] J. Saarilathi, User’s Guide-GISA 3. 96: Program for ionscatteringanalysis, 1996

  • [27] T. Ito, I. Kato, T. Nozaki, T. Nakamura, H. Ishikawa, Appl. Phys. Lett. 38, 370 (1981) http://dx.doi.org/10.1063/1.92341

  • [28] L. M. Terman, Solid State Electron. 5, 285 (1962) http://dx.doi.org/10.1016/0038-1101(62)90111-9

  • [29] G. Dupont, H. Caquineau, B. Despax, R. Berjoan, A. Dollet, J. Phys. DAppl. Phys. 30, 1064 (1997)

  • [30] S. Ghosh, D. N. Bose, J. Mater. Sci. -Mater. El. 5, 193 (1994)

  • [31] J. Robertson, M. J. Powell, Appl. Phys. Lett. 44, 415 (1984) http://dx.doi.org/10.1063/1.94794

  • [32] Z. Yin, F. W. Smith, Phys. Rev. B42, 3666 (1990)

OPEN ACCESS

Journal + Issues

Search