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Nanoelectronics

Device Physics, Fabrication, Simulation

The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.

  • Comprehensive overview on latest research and applications.
  • Problem sets with full solutions given in two steps.
  • Students' Frequently Asked Questions with detailed answers.
  • Author Information

    Joachim Knoch, University Aachen, Germany.
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    Audience: Graduate students and Lecturers in Physics and Engineering.

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